The Joint Electron Devices Engineering Council (JEDEC), is now preparing to start volume production of DDR4 RAM Memory. This DDR4 memory will be successor to its previous Version DDR3 that is commonly found in most new computers. This DDR4 will start working with servers and desktop computers and then work for other tablets and portable devices that are using DDR3 RAM Memory that is less power effective and very slow.
The DDR4 RAM Memory unit will draw less power in comparison to DDR3 as DDR3 uses 1.5 volts while DDR4 will use 1.2 volts. The one addition feature with this will be the performance with improved reliability because the bus speed in this DDR4 RAM will be 2133 MHz and can process read, write and refresh more efficiently.
As it will be firstly used for Servers because its four channel and 12 to 16 cores will make it compatible to high end servers working at 130 W. it is highly reliable DRAM with debugging and diagnostic tool to prevent errors. It can support high-speed multi-core processor.
Architecture: The 8-GB DDR4 SDRAM architecture is built such that it will have separate activation, read, write and refresh operations with 8n prefetching architecture provided with two or four selectable bank groups to improve the overall memory efficiency and bandwidth. Each bank group contains 4 banks. Within each bank, there are 131,072 rows with 512 bytes of DRAM cells per row compared to DDR3 DRAM (65536 rows per bank and 2048 bytes per row). DDR4 DRAM can cycle through different banks at high rate than DDR3 because the smaller row size. Thus DDR4 DRAM Improves capacity and performance scalability. The upcoming Intel’s Ultra high end Haswell-E processor will have support to the DDR4 RAM delivering more bandwidth than previous generation processors.
In this DRAM, the per-pin data rate is 1.6 GHz to 3.2 GHz with speed grades, enabling device functionality with application adoption.
DDR4 RAM will provide a range of innovative features enabling the high speed operation. DDR4 has an aim of simplifying migration.
- Offering x4, x8, x16 Data width
- Data Masking
- Nominal and dynamic ODT
- Burst length of 8 and burst chop of 4
- DBI to inform the DRAM about the data storage
- 512 k Size to reduce power and extending the use of x4 devices
- Efficient EDC Solution for high end systems.
- Normal refresh interval ranging from 1x to 0.0625x
- Support to off mode DLL
- Per-DRAM Addressability
- Low cost parity to verify the integrity.
- Single signal load with 8 memory devices
Thus the DDR4 DRAM will improve the market of low power RAM memory. It will provide high performance to high end processors but motherboards and other hardware will be available at later 2014.
Conclusion: The DDR4, a successor to DDR3 will be power saving DRAM Memory to High End processor using 1.2 Volts rather than 1.5 Volts and large memory capacity of 2GB to 16 GB and support high data rates. Its increased pin count will decrease pitch and 1:1 signal to ground ratio for data bus interface signals.
Posted by : Vijay Kumar Goyal